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High-pressure optical absorption in InN: Electron density dependence in the wurtzite phase and reevaluation of the indirect band gap of rocksalt InN

AuthorsIbáñez Insa, Jordi ; Segura, A.; García-Domene, B.; Oliva, Ramón; Manjón, F. J.; Yamaguchi, T.; Nanishi, Y.; Artús, Lluís
Issue DateJul-2012
PublisherAmerican Physical Society
CitationPhysical Review B 86: 035210 (2012)
AbstractWe report on high-pressure optical absorption measurements on InN epilayers with a range of free-electron concentrations (5×1017–1.6×1019 cm−3) to investigate the effect of free carriers on the pressure coefficient of the optical band gap of wurtzite InN. With increasing carrier concentration, we observe a decrease of the absolute value of the optical band gap pressure coefficient of wurtzite InN. An analysis of our data based on the k·p model allows us to obtain a pressure coefficient of 32 meV/GPa for the fundamental band gap of intrinsic wurtzite InN. Optical absorption measurements on a 5.7-μm-thick InN epilayer at pressures above the wurtzite-to-rocksalt transition have allowed us to obtain an accurate determination of the indirect band gap energy of rocksalt InN as a function of pressure. Around the phase transition (∼15 GPa), a band gap value of 0.7 eV and a pressure coefficient of ∼23 meV/GPa are obtained.
Publisher version (URL)http://dx.doi.org/10.1103/PhysRevB.86.035210
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