Por favor, use este identificador para citar o enlazar a este item: http://hdl.handle.net/10261/96783
COMPARTIR / EXPORTAR:
logo share SHARE logo core CORE BASE
Visualizar otros formatos: MARC | Dublin Core | RDF | ORE | MODS | METS | DIDL | DATACITE

Invitar a revisión por pares abierta
Título

High-pressure Raman scattering in InGaN heteroepitaxial layers: Effect of the substrate on the phonon pressure coefficients

AutorOliva, Ramón; Ibáñez Insa, Jordi CSIC ORCID ; Cuscó, Ramón CSIC ORCID ; Dadgar, A.; Krost, A.; Gandhi, J.; Bensaoula, A.; Artús, Lluís CSIC ORCID
Palabras claveEpilayers
Epitaxial growth
Phonons
GaN/sapphire
Heteroepitaxial layers
InGaN epilayers
Linear Interpolation
Pressure coefficients
Substrate effects
High pressure effects
Fecha de publicaciónabr-2014
EditorAmerican Institute of Physics
CitaciónApplied Physics Letters 104: 142101 (2014)
ResumenWe perform high-pressure Raman-scattering measurements on different In xGa1-xN/Si(111) epilayers (0.19 < x < 0.45). We find that the experimental pressure coefficient of the A 1(LO) mode measured in these samples is larger than that expected from the linear interpolation between the corresponding values of GaN and InN. Similar measurements in InGaN epilayers grown on GaN/sapphire templates yield much lower values, below the linearly interpolated pressure coefficients. We conclude that the phonon pressure coefficients measured in InGaN are mainly determined by the different compressibility of the substrate and epilayer material. Neglecting substrate effects may yield highly inaccurate phonon pressure coefficients and mode Grüneisen parameters.
Versión del editorhttp://dx.doi.org/10.1063/1.4870529
URIhttp://hdl.handle.net/10261/96783
DOI10.1063/1.4870529
ISSN0003-6951
Aparece en las colecciones: (Geo3Bcn) Artículos




Ficheros en este ítem:
Fichero Descripción Tamaño Formato
Oliva 2014 Applied Physics Letters 104 142101.pdf617,79 kBAdobe PDFVista previa
Visualizar/Abrir
Mostrar el registro completo

CORE Recommender

SCOPUSTM   
Citations

2
checked on 18-mar-2024

WEB OF SCIENCETM
Citations

2
checked on 27-feb-2024

Page view(s)

439
checked on 18-mar-2024

Download(s)

323
checked on 18-mar-2024

Google ScholarTM

Check

Altmetric

Altmetric


NOTA: Los ítems de Digital.CSIC están protegidos por copyright, con todos los derechos reservados, a menos que se indique lo contrario.