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X-ray absorption near-edge structure of hexagonal ternary phases in sputter-deposited TiAlN films

AutorGago, Raúl ; Munnik, F.; Vázquez, Luis ; Redondo-Cubero, A.; Endrino, José Luis
Palabras claveNitride materials
Vapour deposition
Atomic scale structure
Fecha de publicación2013
CitaciónJournal of Alloys and Compounds 561: 87-94 (2013)
ResumenTitanium aluminium nitride (TiAlN) coatings have been grown by reactive (Ar/N2) direct-current magnetron sputtering from a Ti 50Al50 compound target. The film composition has been quantified by ion beam analysis showing the formation of Al-rich nitrides (Ti/Al ̃ 0.3), with stoichiometric films for N2 contents in the gas mixture equal or above ̃25%. The surface morphology of the films has been imaged by atomic force microscopy, showing very smooth surfaces with roughness values below 2 nm. X-ray and electron diffraction patterns reveal that the films are nanocrystalline with a wurzite (w) structure of lattice parameters larger (̃2.5%) than those for w-AlN. The lattice expansion correlates with the Ti/Al ratio in stoichiometric films, which suggests the incorporation of Ti into w-AlN. The atomic environments around Ti, Al and N sites have been extracted from the X-ray absorption near-edge structure (XANES) by recording the Ti2p, Al1s and N1s edges, respectively. The analysis of the XANES spectral lineshape and comparison with reported theoretical calculations confirm the formation of a ternary hexagonal phase. © 2013 Elsevier B.V. All rights reserved.
Identificadoresdoi: 10.1016/j.jallcom.2013.01.130
issn: 0925-8388
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