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Título

Structural, thermal and electrical properties of the semiconductor system Ag(1-x)CuxInSe2

Autor Albornoz, J. G.; Rojas, Rosa M.
Palabras clave Semiconductors
Electrical properties
Phase transitions
Transport properties
Chalcogenides
Fecha de publicación 2014
EditorElsevier
Citación Journal of Physics and Chemistry of Solids 75(1): 1-7 (2014)
ResumenThis paper presents a study of bulk samples synthesized of the Ag 1-xCuxInSe2 semiconductor system. Structural, thermal and electrical properties, as a function of the nominal composition (Cu content) x=0.0, 0.2, 0.4, 0.6, 0.8, and 1.0 were studied. The influence of x on parameters such as melting temperature, solid phase transition temperature, lattice parameters, bond lengths, crystallite size t (coherent domain), electrical resistivity, electrical mobility and majority carrier concentration was analyzed. The electrical parameters are analyzed at room temperature. In general, it is observed that the properties of the Ag1-xCu xInSe2 system for x≤0.4 are dominated by n-AgInSe 2, while for x>0.4, these are in the domain of p-CuInSe 2. The crystallite size t in the whole composition range (x) is of the order of the nanoparticles. Secondary phases (CuSe, Ag2Se and InSe) in small proportion were identified by XRD and DTA. © 2013 Elsevier Ltd. All rights reserved.
URI http://hdl.handle.net/10261/95534
DOI10.1016/j.jpcs.2013.08.003
Identificadoresdoi: 10.1016/j.jpcs.2013.08.003
issn: 0022-3697
Aparece en las colecciones: (ICMM) Artículos
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