English   español  
Please use this identifier to cite or link to this item: http://hdl.handle.net/10261/95151
logo share SHARE logo core CORE   Add this article to your Mendeley library MendeleyBASE

Visualizar otros formatos: MARC | Dublin Core | RDF | ORE | MODS | METS | DIDL | DATACITE
Exportar a otros formatos:


Octagonal defects as the source of gap states in graphene semiconducting structures

AuthorsPelc, M. ; Jaskólski, W.; Ayuela, Andrés ; Chico, Leonor
Issue Date2013
PublisherPolish Academy of Sciences
CitationActa Physica Polonica A 124(5): 777-780 (2013)
AbstractWe study graphene nanoribbons and carbon nanotubes with divacancies, i.e., local defects composed of one octagon and a pair of pentagons. We show that the presence of divacancies leads to the appearance of gap states, which may act as acceptor or donor states. We explain the origin of those defect-localized states and prove that they are directly related to the zero-energy states of carbon ring forming the octagonal topological defect.
DescriptionTrabajo presentado al 42th "Jaszowiec" International School and Conference on the Physics of Semiconductors (Wisla-Polonia 2013).
Publisher version (URL)http://przyrbwn.icm.edu.pl/APP/ABSTR/124/a124-5-6.html
Identifiersdoi: 10.12693/APhysPolA.124.777
issn: 0587-4246
e-issn: 1898-794X
Appears in Collections:(ICMM) Artículos
(CFM) Artículos
Files in This Item:
File Description SizeFormat 
Octagonal defects.pdf412,19 kBAdobe PDFThumbnail
Show full item record
Review this work

WARNING: Items in Digital.CSIC are protected by copyright, with all rights reserved, unless otherwise indicated.