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dc.contributor.authorAguilera, Lydya-
dc.contributor.authorMontero, Isabel-
dc.contributor.authorDávila, M. E.-
dc.contributor.authorRuiz, Amalia-
dc.contributor.authorGalán, L.-
dc.contributor.authorNistor, V.-
dc.contributor.authorRaboso, D.-
dc.contributor.authorPalomares, F. Javier-
dc.contributor.authorSoria, Federico-
dc.date.accessioned2014-03-21T10:04:23Z-
dc.date.available2014-03-21T10:04:23Z-
dc.date.issued2013-
dc.identifierdoi: 10.1088/0022-3727/46/16/165104-
dc.identifierissn: 0022-3727-
dc.identifiere-issn: 1361-6463-
dc.identifier.citationJournal of Physics D: Applied Physics 46(4): 165104 (2013)-
dc.identifier.urihttp://hdl.handle.net/10261/94001-
dc.description.abstractCopper oxide nanowires (NWs) grown on copper to avoid the secondary electron emission were investigated. Optimal temperatures for NW growth were found to be in the range 700–800 K. NW surface coverage of 102 µm−2 is required to strongly reduce the secondary electron yield. A total secondary electron emission coefficient below 1 was obtained for NW aspect ratio higher than 103. © 2013 IOP Publishing Ltd.-
dc.description.sponsorshipThis work was supported by the European Space Agency (ESA) and MICIIN of Spain Projects No AYA2009-14736-C02-01 and AYA2009-14736-C02-02.-
dc.publisherInstitute of Physics Publishing-
dc.rightsclosedAccess-
dc.titleCuO nanowires for inhibiting secondary electron emission-
dc.typeartículo-
dc.identifier.doihttp://dx.doi.org/10.1088/0022-3727/46/16/165104-
dc.date.updated2014-03-21T10:04:23Z-
dc.description.versionPeer Reviewed-
dc.language.rfc3066eng-
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