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Composition and bonding structure of boron nitride B1- xNx thin films grown by ion-beam assisted evaporation

AuthorsCaretti, Ignacio ; Jiménez Guerrero, Ignacio
Issue Date2011
CitationChemical Physics Letters 511(4-6): 235-240 (2011)
AbstractWe present a detailed study of B1-xNx (0 < x < 0.6) films synthesized at room temperature by N2+ ion-beam assisted evaporation of boron. The atom-ion ratio was related to the final boron concentration as determined by X-ray energy dispersive spectroscopy (XEDS), and to the bonding structure explored by infrared (IR) and X-ray absorption near-edge structure (XANES) spectroscopies. IR and XANES revealed that N-rich boron nitrides had a graphite-like structure with embedded nitrogen molecules, while B-rich boron nitrides consisted of different ratios of B 13N2/h-BN phases. Our spectroscopic results indicate that this B13N2 structure is made of B12 icosahedral units linked by N-B-N linear chains. © 2011 Elsevier B.V. All rights reserved.
Publisher version (URL)http;//dx.doi.org/10.1016/j.cplett.2011.06.001
Identifiersdoi: 10.1016/j.cplett.2011.06.001
issn: 0009-2614
Appears in Collections:(ICMM) Artículos
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