Por favor, use este identificador para citar o enlazar a este item:
http://hdl.handle.net/10261/92859
COMPARTIR / EXPORTAR:
SHARE CORE BASE | |
Visualizar otros formatos: MARC | Dublin Core | RDF | ORE | MODS | METS | DIDL | DATACITE | |
Título: | Electron density gradients in ammonothermally grown Si-doped GaN |
Autor: | Cuscó, Ramón CSIC ORCID ; Domènech-Amador, Núria CSIC; Jiménez, Juan; Artús, Lluís CSIC ORCID | Fecha de publicación: | 2014 | Editor: | Japanese Society of Applied Physics | Citación: | Applied Physics Express 7 (2014) | Resumen: | Charge homogeneity in heavily Si-doped ammonothermal GaN has been studied by confocal micro-Raman measurements. The polarized Raman spectra indicate a high crystalline quality of the sample. On the N-polarity growth sector we observe both branches (L+, L-) of the phonon-plasmon coupled modes. The free-electron density, which is derived from a line-shape fit to the L+ mode, displays an in-depth gradient with a decreasing density when the top surface is approached. The Raman spectra of the Ga-polarity growth sector do not show any trace of phonon-plasmon coupled modes, suggesting a lower Si incorporation and/or the presence of compensating deep levels. © 2014 The Japan Society of Applied Physics. | Versión del editor: | http://iopscience.iop.org/1882-0786/7/2/021001 | URI: | http://hdl.handle.net/10261/92859 | DOI: | 10.7567/APEX.7.021001 | Identificadores: | doi: 10.7567/APEX.7.021001 issn: 1882-0778 |
Aparece en las colecciones: | (Geo3Bcn) Artículos |
Ficheros en este ítem:
Fichero | Descripción | Tamaño | Formato | |
---|---|---|---|---|
accesoRestringido.pdf | 15,38 kB | Adobe PDF | Visualizar/Abrir |
CORE Recommender
SCOPUSTM
Citations
2
checked on 13-mar-2024
WEB OF SCIENCETM
Citations
2
checked on 19-feb-2024
Page view(s)
359
checked on 19-mar-2024
Download(s)
95
checked on 19-mar-2024
Google ScholarTM
Check
Altmetric
Altmetric
NOTA: Los ítems de Digital.CSIC están protegidos por copyright, con todos los derechos reservados, a menos que se indique lo contrario.