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Electron density gradients in ammonothermally grown Si-doped GaN

AuthorsCuscó, Ramón CSIC ORCID ; Domènech-Amador, Núria CSIC; Jiménez, Juan; Artús, Lluís CSIC ORCID
Issue Date2014
PublisherJapanese Society of Applied Physics
CitationApplied Physics Express 7 (2014)
AbstractCharge homogeneity in heavily Si-doped ammonothermal GaN has been studied by confocal micro-Raman measurements. The polarized Raman spectra indicate a high crystalline quality of the sample. On the N-polarity growth sector we observe both branches (L+, L-) of the phonon-plasmon coupled modes. The free-electron density, which is derived from a line-shape fit to the L+ mode, displays an in-depth gradient with a decreasing density when the top surface is approached. The Raman spectra of the Ga-polarity growth sector do not show any trace of phonon-plasmon coupled modes, suggesting a lower Si incorporation and/or the presence of compensating deep levels. © 2014 The Japan Society of Applied Physics.
Publisher version (URL)http://iopscience.iop.org/1882-0786/7/2/021001
Identifiersdoi: 10.7567/APEX.7.021001
issn: 1882-0778
Appears in Collections:(Geo3Bcn) Artículos
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