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Plasmons in electrostatically doped graphene

AutorThongrattanasiri, S.; Silveiro, Iván; García de Abajo, Francisco Javier
Fecha de publicación2012
EditorAmerican Institute of Physics
CitaciónApplied Physics Letters 100(20): 201105 (2012)
ResumenGraphene has raised high expectations as a low-loss plasmonic material in which the plasmon properties can be controlled via electrostatic doping. Here, we analyze realistic configurations, which produce inhomogeneous doping, in contrast to what has been so far assumed in the study of plasmons in nanostructured graphene. Specifically, we investigate backgated ribbons, co-planar ribbon pairs placed at opposite potentials, and individual ribbons subject to a uniform electric field. Plasmons in backgated ribbons and ribbon pairs are similar to those of uniformly doped ribbons, provided the Fermi energy is appropriately scaled to compensate for finite-size effects such as the divergence of the carrier density at the edges. In contrast, the plasmons of a ribbon exposed to a uniform field exhibit distinct dispersion and spatial profiles that considerably differ from uniformly doped ribbons. Our results provide a road map to understand graphene plasmons under realistic electrostatic doping conditions. © 2012 American Institute of Physics.
Identificadoresdoi: 10.1063/1.4714688
issn: 0003-6951
e-issn: 1077-3118
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