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Ultimate limits for the radiation hardness of silicon strip detectors for sLHC

AutorLozano Fantoba, Manuel; Campabadal, Francesca; García García, Carmen ; González Sevilla, Sergio ; Lacasta Llácer, Carlos ; Lacuesta, Vicente ; Martí García, Salvador ; Miñano, Mercedes ; Pellegrini, Giulio; Ullán Comes, Miguel; Rafí, Joan Marc
Palabras claveMicrostrip detectors
Silicon detectors
Radiation hardness
Fecha de publicación6-ago-2007
CitaciónNuclear Instruments & Methods in Physics Research Section A - Accelerators, Spectrometers, Detectors and Associated Equipment 581(1-2): 365-367 (2007)
ResumenThe new SuperLHC upgrade will impose severe restrictions on the radiation hardness of silicon detectors since a maximum fluence of 10^(16) particles/cm2 is foreseen in the innermost region. Microstrip detectors have been fabricated in p-type high resistivity float zone silicon at CNM facilities, been irradiated at the TRIGA reactor in Ljubljana to a fluence of 10^(16) neutrons/cm2 and characterized at IFIC laboratory. The total collected charge before and after irradiation in the detectors has been measured by Sr-90 beta source and by infrared laser illumination. The results show that even after this extreme radiation fluence, p-type substrate detectors collect 3500 electrons when biased at 800 V, which is enough charge to induce a measurable signal with standard readout electronics. P-type strip detectors could be suitable for the middle and even inner regions of sLHC.
Descripción3 pages, 2 figures.-- PACS nrs.: 29.40.Gx; 29.40.Wk.-- ISI Article Identifier: 000251039100078
Printed version published on Oct 21, 2007.-- Issue title: VCI 2007 - Proceedings of the 11th International Vienna Conference on Instrumentation (Vienna, Feb 19-24, 2007).
Versión del editorhttp://dx.doi.org/10.1016/j.nima.2007.08.006
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