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Title: | Ultimate limits for the radiation hardness of silicon strip detectors for sLHC |
Authors: | Lozano Fantoba, Manuel ; Campabadal, Francesca; García García, Carmen ![]() ![]() ![]() ![]() ![]() ![]() |
Keywords: | Microstrip detectors Silicon detectors p-Type Super-LHC Radiation hardness |
Issue Date: | 6-Aug-2007 |
Publisher: | Elsevier |
Citation: | Nuclear Instruments & Methods in Physics Research Section A - Accelerators, Spectrometers, Detectors and Associated Equipment 581(1-2): 365-367 (2007) |
Abstract: | The new SuperLHC upgrade will impose severe restrictions on the radiation hardness of silicon detectors since a maximum fluence of 10^(16) particles/cm2 is foreseen in the innermost region. Microstrip detectors have been fabricated in p-type high resistivity float zone silicon at CNM facilities, been irradiated at the TRIGA reactor in Ljubljana to a fluence of 10^(16) neutrons/cm2 and characterized at IFIC laboratory. The total collected charge before and after irradiation in the detectors has been measured by Sr-90 beta source and by infrared laser illumination. The results show that even after this extreme radiation fluence, p-type substrate detectors collect 3500 electrons when biased at 800 V, which is enough charge to induce a measurable signal with standard readout electronics. P-type strip detectors could be suitable for the middle and even inner regions of sLHC. |
Description: | 3 pages, 2 figures.-- PACS nrs.: 29.40.Gx; 29.40.Wk.-- ISI Article Identifier: 000251039100078 Printed version published on Oct 21, 2007.-- Issue title: VCI 2007 - Proceedings of the 11th International Vienna Conference on Instrumentation (Vienna, Feb 19-24, 2007). |
Publisher version (URL): | http://dx.doi.org/10.1016/j.nima.2007.08.006 |
URI: | http://hdl.handle.net/10261/9163 |
DOI: | http://dx.doi.org/10.1016/j.nima.2007.08.006 |
ISSN: | 0168-9002 |
Appears in Collections: | (IFIC) Artículos (IMB-CNM) Artículos |
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