Technology of p-type microstrip detectors with radiation hard p-spray, p-stop and moderated p-spray insulations

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Título :	Technology of p-type microstrip detectors with radiation hard p-spray, p-stop and moderated p-spray insulations
Autor :	Pellegrini, Giulio; Fleta, Celeste; Campabadal, Francesca; Miñano, Mercedes ; Lozano Fantoba, Manuel; Rafí, Joan Marc; Ullán Comes, Miguel
Palabras clave :	Microstrip detectors Radiation hardness Insulation Super-LHC [PACS] Tracking and position-sensitive detectors
Fecha de publicación :	24-may-2007
Editor:	Elsevier
Citación :	Nuclear Instruments & Methods in Physics Research Section A - Accelerators, Spectrometers, Detectors and Associated Equipment 579(2): 599-603 (2007)
Resumen:	A technology for the fabrication of p-type microstrip silicon radiation detectors using moderated p-spray implant insulation has been developed at CNM-IMB. The p-spray insulation has been optimized in order to withstand the ionizing irradiation dose expected in the middle region of the SCT-ATLAS detector of the future Super Large Hadron Collider (s-LHC) during 10 years of operation. A dedicated mask was designed in order to fabricate pad diodes with different sizes and test structures to measure the surface resistivity. The best technological options for the moderated p-spray implants were found by using a simulation software package and a dedicated calibration run. Detectors have been fabricated with Float Zone (FZ) p-type high resistivity silicon substrates in the Clean Room facility of CNM-IMB, and characterized by reverse current and capacitance versus voltage measurements. The detectors fabricated with the moderated p-spray technology are compared to similar detectors fabricated with p-stop and p-spray insulation implants. A dedicated test structure was used to measure the interstrip resistance.
Descripción :	5 pages, 8 figures.-- PACS nrs.: 29.40.Gx; 29.40.-- ISI Article Identifier: 000249604700010. Printed version published on Sep 1, 2007.-- Issue title: Proceedings of the 6th "Hiroshima" Symposium on the Development and Application of Semiconductor Detectors (Carmel, CA, Sep 11-15, 2006).
Versión del editor:	http://dx.doi.org/10.1016/j.nima.2007.05.253
URI :	http://hdl.handle.net/10261/9158
DOI:	10.1016/j.nima.2007.05.253
ISSN:	0168-9002
Aparece en las colecciones:	(IFIC) Artículos (IMB-CNM) Artículos

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