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Título

Characterization of irradiated detectors fabricated on p-type silicon substrates for super-LHC

AutorMiñano, Mercedes ; Campabadal, Francesca; Escobar, Carlos ; García García, Carmen ; González Sevilla, Sergio ; Lacasta Llácer, Carlos ; Lozano Fantoba, Manuel; Martí García, Salvador ; Pellegrini, Giulio; Rafí, Joan Marc; Ullán Comes, Miguel
Palabras clavep-Type microstrip detectors
Neutron irradiation
Radiation hardness
Super-LHC
Microdischarges
Fecha de publicación30-ago-2007
EditorElsevier
CitaciónNuclear Instruments & Methods in Physics Research Section A - Accelerators, Spectrometers, Detectors and Associated Equipment 583(1): 33-36 (2007)
ResumenAn upgrade of the large hadron collider (LHC), the Super-LHC (SLHC), towards higher luminosities is currently being discussed as an extension of the LHC physics program. The goal of the SLHC is to operate at a luminosity of 10(35) cm(-2) s(-1) (10 times larger than that of the LHC one). Thus, the operation of the SLHC implies a need to upgrade the detectors of the LHC experiments. The current tracking system of ATLAS will not cope with that luminosity. New solutions must be investigated to improve the radiation tolerance of the semiconductor detector. p-Type bulk sensors are being considered for the ATLAS tracking system for the SLHC. Microstrip detectors fabricated by CNM-IMB on p-type high-resistivity float zone silicon have been irradiated with neutrons at the TRIGA Mark II reactor in Ljubljana up to a fluence of 10(16) cm(-2) (as expected in the innermost region of the ATLAS upgrade) and have been characterized at IFIC Laboratory. The collected charge, after irradiation, has been measured by infrared laser illumination. The leakage current of those sensors is also reported. (C) 2007 Elsevier B.V. All rights reserved.
Descripción4 pages, 5 figures.-- PACS nrs.: 29.40.−n; 29.40.Wk; 81.40.Wx.-- ISI Article Identifier: 000251861100008
Printed version published on Dec 11, 2007.-- Issue title: Proceedings of the 6th International Conference on Radiation Effects on Semiconductor Materials, Detectors and Devices - RESMDD 2006 (Firenze, Oct 10-13, 2006).
Versión del editorhttp://dx.doi.org/10.1016/j.nima.2007.08.210
URIhttp://hdl.handle.net/10261/9146
DOI10.1016/j.nima.2007.08.210
ISSN0168-9002
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