English   español  
Por favor, use este identificador para citar o enlazar a este item: http://hdl.handle.net/10261/90049
Compartir / Impacto:
Estadísticas
Add this article to your Mendeley library MendeleyBASE
Citado 11 veces en Web of Knowledge®  |  Ver citas en Google académico
Visualizar otros formatos: MARC | Dublin Core | RDF | ORE | MODS | METS | DIDL
Exportar otros formatos: Exportar EndNote (RIS)Exportar EndNote (RIS)Exportar EndNote (RIS)
Título

A new bottom-up methodology to produce silicon layers with a closed porosity nanostructure and reduced refractive index

Autor Godinho, V. ; Caballero-Hernández, J. ; Jamon, D.; Rojas, T. Cristina; Schierholz, R. ; García López, J. ; Ferrer, F. J. ; Fernández-Camacho, A.
Fecha de publicación 14-jun-2013
EditorInstitute of Physics Publishing
Citación Nanotechnology 24(27): 275604 (2013)
ResumenA new approach is presented to produce amorphous porous silicon coatings (a-pSi) with closed porosity by magnetron sputtering of a silicon target. It is shown how the use of He as the process gas at moderated power (50–150 W RF) promotes the formation of closed nanometric pores during the growth of the silicon films. The use of oblique-angle deposition demonstrates the possibility of aligning and orientating the pores in one direction. The control of the deposition power allows the control of the pore size distribution. The films have been characterized by a variety of techniques, including scanning and transmission electron microscopy, electron energy loss spectroscopy, Rutherford back scattering and x-ray photoelectron spectroscopy, showing the incorporation of He into the films (most probably inside the closed pores) and limited surface oxidation of the silicon coating. The ellipsometry measurements show a significant decrease in the refractive index of porous coatings (n500 nm = 3.75) in comparison to dense coatings (n500 nm = 4.75). The capability of the method to prepare coatings with a tailored refractive index is therefore demonstrated. The versatility of the methodology is shown in this paper by preparing intrinsic or doped silicon and also depositing (under DC or RF discharge) a-pSi films on a variety of substrates, including flexible materials, with good chemical and mechanical stability. The fabrication of multilayers of silicon films of controlled refractive index in a simple (one-target chamber) deposition methodology is also presented.
Descripción Open Access articles are published under the Creative Commons Attribution-Unported (CC-BY) 3.0 license.
Versión del editorhttp://dx.doi.org/10.1088/0957-4484/24/27/275604
URI http://hdl.handle.net/10261/90049
DOI10.1088/0957-4484/24/27/275604
ISSN0957-4484
Aparece en las colecciones: (ICMS) Artículos
(CNA) Artículos
Ficheros en este ítem:
Fichero Descripción Tamaño Formato  
Nanotechnology_24_2013_AFernández.pdf2,26 MBAdobe PDFVista previa
Visualizar/Abrir
Mostrar el registro completo
 



NOTA: Los ítems de Digital.CSIC están protegidos por copyright, con todos los derechos reservados, a menos que se indique lo contrario.