English   español  
Please use this identifier to cite or link to this item: http://hdl.handle.net/10261/89622
logo share SHARE logo core CORE   Add this article to your Mendeley library MendeleyBASE

Visualizar otros formatos: MARC | Dublin Core | RDF | ORE | MODS | METS | DIDL
Exportar a otros formatos:


Waveguide saturable absorbers at 1.55 μm based on intraband transitions in GaN/AlN QDs

AuthorsMonteagudo-Lerma, L.; Valdueza-Felip, S.; Naranjo, F. B.; Corredera, Pedro ; Rapenne, L.; Sarigiannidou, E.; Strasser, G.; Monroy, E.; González Herráez, Miguel
KeywordsAll-optical devices
Semiconductor nonlinear optics including MQW
Issue Date2013
PublisherOptical Society of America
CitationOptics Express 21: 27578-27586 (2013)
AbstractWe report on the design, fabrication and optical characterization of GaN/AlN quantum-dot-based waveguides for all-optical switching via intraband absorption saturation at 1.55 μm. The transmittance of the TMpolarized light increases with the incident optical power due to the saturation of the s-p z intraband absorption in the QDs. Single-mode waveguides with a ridge width of 2 μm and a length of 1.5 mm display 10 dB absorption saturation of the TM-polarized light for an input pulse energy of 8 p J and 150 fs. © 2013 Optical Society of America.
Identifiersdoi: 10.1364/OE.21.027578
issn: 1094-4087
Appears in Collections:(CFMAC-IO) Artículos
Files in This Item:
File Description SizeFormat 
Monteagudo.pdf1,69 MBAdobe PDFThumbnail
Show full item record
Review this work

Related articles:

WARNING: Items in Digital.CSIC are protected by copyright, with all rights reserved, unless otherwise indicated.