English   español  
Please use this identifier to cite or link to this item: http://hdl.handle.net/10261/88520
logo share SHARE logo core CORE   Add this article to your Mendeley library MendeleyBASE

Visualizar otros formatos: MARC | Dublin Core | RDF | ORE | MODS | METS | DIDL
Exportar a otros formatos:


The correlation between microstructure, chemical profile and reflectivity changes in laser-irradiated Sb/Ge multilayer films

AuthorsPetford-Long, A. K.; Long, N. J.; Serna, Rosalía ; Afonso, Carmen N.
Issue Date1993
CitationJournal of Magnetism and Magnetic Materials 126: 599-601 (1993)
AbstractLaser irradiation of Sb/Ge layered films has induced melting and interfacial mixing. The melting/mixing process nucleates at interfacial preferential sites, and follows a well-defined planar front when Sb is the upper layer. When Ge is uppermost, rippling of the film surface and mixed layers are observed. © 1993.
Identifiersdoi: 10.1016/0304-8853(93)90698-2
issn: 0304-8853
Appears in Collections:(CFMAC-IO) Artículos
Files in This Item:
File Description SizeFormat 
accesoRestringido.pdf15,38 kBAdobe PDFThumbnail
Show full item record
Review this work

Related articles:

WARNING: Items in Digital.CSIC are protected by copyright, with all rights reserved, unless otherwise indicated.