English   español  
Por favor, use este identificador para citar o enlazar a este item: http://hdl.handle.net/10261/87958
Compartir / Impacto:
Estadísticas
Add this article to your Mendeley library MendeleyBASE
Citado 8 veces en Web of Knowledge®  |  Ver citas en Google académico
Visualizar otros formatos: MARC | Dublin Core | RDF | ORE | MODS | METS | DIDL
Exportar otros formatos: Exportar EndNote (RIS)Exportar EndNote (RIS)Exportar EndNote (RIS)
Título

Influence of the power on the processes controlling the formation of ECR-CVD carbon nitride films from CH4/Ar/N2 plasmas

Autor Camero, Manuel; Gordillo Vázquez, Francisco J. ; Ortiz, J.; Gómez-Aleixandre, C.
Palabras clave [PACS] Emission, absorption, and scattering of electromagnetic radiation
[PACS] Electric discharges
[PACS] Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, etc.)
[PACS] Etching and cleaning
[PACS] Plasma-based ion implantation and deposition
Fecha de publicación 2004
EditorInstitute of Physics Publishing
Citación Plasma Sources Science and Technology 13: 121-126 (2004)
ResumenCarbon nitride films have been synthesized by means of electron cyclotron resonance chemical vapour deposition (ECR-CVD) using different power values (50-212 W) at constant pressure conditions (0.03 mbar). Optical emission spectroscopy and mass spectrometry were used for the characterization of the plasma. The films were analysed using energy dispersive x-ray spectroscopies. It was found that all signal peaks in the optical emission spectra increased monotonically following the increase in microwave power. Moreover, we have observed that the radiative emission from the 4p(2p9) resonant state of Ar is the most affected by CH4 addition to a pure argon plasma. The latter suggests that a Penning mechanism controls the activation of CH4 molecules with increasing power levels at relatively low pressures. Besides, the increase of excited N atoms indicates a higher activity of the etching mechanisms of carbon nitride films with increasing power. © 2004 IOP Publishing Ltd
URI http://hdl.handle.net/10261/87958
DOI10.1088/0963-0252/13/1/015
Identificadoresdoi: 10.1088/0963-0252/13/1/015
issn: 0963-0252
Aparece en las colecciones: (CFMAC-IO) Artículos
(ICMM) Artículos
Ficheros en este ítem:
Fichero Descripción Tamaño Formato  
accesoRestringido.pdf15,38 kBAdobe PDFVista previa
Visualizar/Abrir
Mostrar el registro completo
 



NOTA: Los ítems de Digital.CSIC están protegidos por copyright, con todos los derechos reservados, a menos que se indique lo contrario.