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Influence of RF-sputtering power on formation of vertically stacked Si 1-xGex nanocrystals between ultra-thin amorphous Al 2O3 layers: Structural and photoluminescence properties

AutorVieira, E. M. F.; Martín-Sánchez, Javier; Roldán, M. A. ; Varela, M.; Buljan, M.; Bernstorff, S.; Barradas, N. P.; Franco, N.; Correia, M. R.; Rolo, A. G.; Pennycook, S. J.; Molina, S. I.; Alves, E.; Chahboun, A.; Gomes, M. J. M.
Fecha de publicación2013
EditorInstitute of Physics Publishing
CitaciónJournal of Physics D - Applied Physics 46: 385301 (2013)
ResumenIn this work, we investigate the structural and photoluminescence (PL) properties of (SiGe+Al2O3)/Al2O3 multi-layer films with layer thicknesses in the range of a few nanometres. The films were prepared by magnetron sputtering deposition at room temperature followed by an annealing process to promote the formation of small SiGe nanocrystals (NCs) (∼3 to 5 nm) embedded between ultra-thin (∼6 nm thickness) Al2O3 layers. Our results show that the structural and compositional properties of the films can be tuned by changing the RF-power. It is found that nearly spherical and well confined isolated SiGe NCs (∼5 nm) are obtained for an RF-power value of 80 W. The PL properties of the films were studied and optical emission in the blue visible wavelength region was observed. © 2013 IOP Publishing Ltd.
Identificadoresdoi: 10.1088/0022-3727/46/38/385301
issn: 0022-3727
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