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Enhancement of Er3+ emission from an Er-Si codoped Al 2O3 film by stacking Si-doped Al2O3 sublayers

AuthorsWang, X.; Jiang, Zuimin; Xu, Fei ; Ma, Zhongquan; Xu, Run; Yu, Bin; Li, Mingzhu; Zheng, Lingling; Fan, Yongliang; Huang, Jian; Lu, Fang
Issue Date2011
PublisherInstitute of Physics Publishing
CitationChinese Physics Letters 28: 127802 (2011)
AbstractA multilayer film (multi-film), consisting of alternate Er-Si-codoped Al2O3 (ESA) and Si-doped Al2O3 (SA) sublayers, is synthesized by co-sputtering from separated Er, Si, and Al 2O3 targets. The dependence of Er3+ related photoluminescence (PL) properties on annealing temperatures over 700-1100°C is studied. The maximum intensity of Er3+ photoluminance (PL), about 10 times higher than that of the monolayer film, is obtained from the multi-film annealed at 950°C. The enhancement of Er3+ PL intensity is attributed to the energy transfer from the silicon nanocrystals (Si-NCs) to the neighboring Er3+ ions. The effective characteristic interaction distance (or the critical ET length) between Er and carriers (Si-NCs) is ∼3 nm. The PL intensity exhibits a nonmonotonic temperature dependence. Meanwhile, the PL integrated intensity at room temperature is about 30% higher than that at 14 K. © 2011 Chinese Physical Society and IOP Publishing Ltd.
Identifiersdoi: 10.1088/0256-307X/28/12/127802
issn: 0256-307X
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