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dc.contributor.authorRodríguez-Villegas, E.-
dc.contributor.authorYúfera, A.-
dc.contributor.authorRueda, Adoración-
dc.date.accessioned2013-10-31T12:46:13Z-
dc.date.available2013-10-31T12:46:13Z-
dc.date.issued2004-
dc.identifierdoi: 10.1109/JSSC.2003.820848-
dc.identifierissn: 0018-9200-
dc.identifier.citationIEEE Journal of Solid-State Circuits 39(1): 100-111 (2004)-
dc.identifier.urihttp://hdl.handle.net/10261/85447-
dc.description.abstractThis paper presents a novel linearized transconductor architecture working at 1.25 V in a 0.8-μm CMOS technology with very low power consumption. The special features of the floating-gate MOS (FGMOS) transistor are combined in weak and strong inversion leading to a simplified topology with fewer stacked transistors and a very low noise floor. The design methodology is thoroughly explained, together with the advantages and disadvantages of working with the FGMOS transistor. Furthermore, second-order effects arising from nonideal behavior of the device are analyzed and limits for the performance are established. Experimental results from a second-order low-pass/bandpass filter that was implemented using the transconductor show a tunability of over one and a half decades in the audio range, a dynamic range of over 62 dB, and a maximum power consumption of 2.5 μW. These results demonstrate the suitability of the FGMOS transistor for implementing analog continuous-time filters, while at the same time pushing down the voltage limits of process technologies and simplifying the circuit topologies to obtain significant power savings.-
dc.language.isoeng-
dc.publisherInstitute of Electrical and Electronics Engineers-
dc.rightsclosedAccess-
dc.titleA 1.25-V micropower Gm-C filter based on FGMOS transistors operating in weak inversion-
dc.typeArtículo-
dc.identifier.doi10.1109/JSSC.2003.820848-
dc.date.updated2013-10-31T12:46:13Z-
dc.description.versionPeer Reviewed-
Appears in Collections:(IMSE-CNM) Artículos
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