English   español  
Please use this identifier to cite or link to this item: http://hdl.handle.net/10261/85143
Share/Impact:
Statistics
logo share SHARE logo core CORE   Add this article to your Mendeley library MendeleyBASE

Visualizar otros formatos: MARC | Dublin Core | RDF | ORE | MODS | METS | DIDL
Exportar a otros formatos:
Title

Novel InN/InGaN multiple quantum well structures for slow-light generation at telecommunication wavelengths

AuthorsNaranjo, F. B.; Kandaswamy, P. K.; Valdueza-Felip, S.; Lahourcade, L.; Calvo, V.; González Herráez, Miguel; Martín-López, Sonia; Corredera, Pedro ; Monroy, E.
Issue Date2010
PublisherWiley-VCH
CitationPhysica Status Solidi (C) Current Topics in Solid State Physics 7(1): 100-103 (2010)
AbstractThe third order susceptibility is responsible for a variety of optical non-linear phenomena - like self focusing, phase conjugation and four-wave mixing - with applications in coherent control of optical communication. InN is particularly attractive due to its near-IR bandgap and predicted high nonlinear effects. Moreover, the synthesis of InN nanostructures makes possible to taylor the absorption edge in the telecomunication spectral range and enhance nonlinear parameters thanks to carrier confinement. In this work, we assess the nonlinear optical behavior of InN/InxGa(1-x)N (0.9 > x > 0.7) multiple-quantum-well (MQW) structures grown by plasma-assisted MBE on GaN-on-sapphire templates. Low-temperature (5 K) photoluminescence measurements show near-IR emission whose intensity increases with the In content in the barriers, which is explained in terms of the existence of piezoelectric fields in the structures. The nonlinear optical absorption coefficient, α2, were measured at 1.55 μm using the Z-scan method. We observe a strong dependence of the nonlinear absorption coefficient on the In content in the barriers. Saturable absorption is observed for the sample with x = 0.9, with α2 ∼ -9 x 103 cm/GW. For this sample, an optically controlled reduction of the speed of light by a factor S ∼ 80 is obtained at 1.55 μm (© 2010 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim
URIhttp://hdl.handle.net/10261/85143
DOI10.1002/pssc.200982628
Identifiersdoi: 10.1002/pssc.200982628
issn: 1862-6351
Appears in Collections:(IFA) Artículos
(CFMAC-IO) Artículos
Files in This Item:
File Description SizeFormat 
accesoRestringido.pdf15,38 kBAdobe PDFThumbnail
View/Open
Show full item record
Review this work
 


WARNING: Items in Digital.CSIC are protected by copyright, with all rights reserved, unless otherwise indicated.