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Compact and power efficient MOS-NDR muller C-elements

AuthorsNúñez, Juan ; Avedillo, M. J. ; Quintana, J. M.
Issue Date2012
CitationTechnological Innovation for Value Creation: 437-442 (2012)
SeriesIFIP Advances in Information and Communication Technology 372
AbstractRecently there is a renewed interest in the development of transistor circuits which emulate the Negative Differential Resistance (NDR) exhibited by different emerging devices like Resonant Tunneling Diodes (RTDs). These MOS-NDR circuits easily allow the prototyping of design concepts and techniques developed for such NDR devices. The importation of those concepts into transistor technologies can result in circuit realizations which are advantageous for some functionalities and application fields. This paper describes a Muller C-element which illustrates this statement which is inspired in an RTD-based topology. The required RTD is implemented by means of the MOS-NDR device. A 4-input Muller C-element has been fabricated and experimentally validated. The proposed circuit compares favorably with respect to a well-known conventional gate realization.
DescriptionTrabajo presentado al "Third IFIP WG 5.5/SOCOLNET Doctoral Conference on Computing, Electrical and Industrial Systems, DoCEIS 2012" celebrado en Costa de Caparica (Portugal) del 27 al 29 de Febrero del 2012.
Publisher version (URL)http://dx.doi.org/10.1007/978-3-642-28255-3_48
Identifiersdoi: 10.1007/978-3-642-28255-3_48
isbn: 978-3-642-28254-6
Appears in Collections:(IMSE-CNM) Libros y partes de libros
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