English   español  
Please use this identifier to cite or link to this item: http://hdl.handle.net/10261/8465
logo share SHARE logo core CORE   Add this article to your Mendeley library MendeleyBASE

Visualizar otros formatos: MARC | Dublin Core | RDF | ORE | MODS | METS | DIDL
Exportar a otros formatos:

Origin of the surface-state band-splitting in ultrathin Bi films: from a Rashba effect to a parity effect

AuthorsHirahara, Toru; Miyamoto, Koji; Kimura, A.; Niinuma, Y.; Bihlmayer, G.; Chulkov, Eugene V. ; Nagao, Tadaaki; Matsuda, I.; Qiao, S.; Shimada, K.; Namatame, H.; Taniguchi, M.; Hasegawa, Shuji
KeywordsUltrathin Bi(001) films
Metallic surface states
Band splitting
Rashba effect
Parity effect
Quantum confinement
Ab initio calculations
Issue Date28-Aug-2008
PublisherInstitute of Physics Publishing
CitationNew J. Phys. 10(8): 083038 (2008)
AbstractFollowing our previous work (Hirahara T et al 2007 Phys. Rev. B 76 153305), we have performed spin- and angle-resolved photoemission measurements at ~120 K on ultrathin Bi films grown on a Si substrate, focusing on the split surface-state bands near the Fermi level. We found clear experimental evidence that these states show Rashba-type spin-split behavior near \barΓ, but the splitting is lost near \barM where they overlap with the bulk band projection. This can be explained as a change in the origin of the splitting from a Rashba effect to a parity effect as revealed by ab initio calculations.
Description12 pages, 4 figures.
Publisher version (URL)http://dx.doi.org/10.1088/1367-2630/10/8/083038
Appears in Collections:(CFM) Artículos
Files in This Item:
File Description SizeFormat 
Ultrathin_bi_films.pdf2,23 MBAdobe PDFThumbnail
Show full item record
Review this work

Related articles:

WARNING: Items in Digital.CSIC are protected by copyright, with all rights reserved, unless otherwise indicated.