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Origin of the surface-state band-splitting in ultrathin Bi films: from a Rashba effect to a parity effect

AutorHirahara, T.; Miyamoto, K.; Kimura, A.; Niinuma, Y.; Bihlmayer, G.; Chulkov, Eugene V. ; Nagao, Tadaaki; Matsuda, I.; Qiao, S.; Shimada, K.; Namatame, H.; Taniguchi, M.; Hasegawa, S.
Palabras claveUltrathin Bi(001) films
Metallic surface states
Band splitting
Rashba effect
Parity effect
Quantum confinement
Ab initio calculations
Fecha de publicación28-ago-2008
EditorInstitute of Physics Publishing
CitaciónNew J. Phys. 10(8): 083038 (2008)
ResumenFollowing our previous work (Hirahara T et al 2007 Phys. Rev. B 76 153305), we have performed spin- and angle-resolved photoemission measurements at ~120 K on ultrathin Bi films grown on a Si substrate, focusing on the split surface-state bands near the Fermi level. We found clear experimental evidence that these states show Rashba-type spin-split behavior near \barΓ, but the splitting is lost near \barM where they overlap with the bulk band projection. This can be explained as a change in the origin of the splitting from a Rashba effect to a parity effect as revealed by ab initio calculations.
Descripción12 pages, 4 figures.
Versión del editorhttp://dx.doi.org/10.1088/1367-2630/10/8/083038
URIhttp://hdl.handle.net/10261/8465
DOI10.1088/1367-2630/10/8/083038
ISSN1367-2630
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