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Evaluation of MOBILE-based gate-level pipelining augmenting CMOS with RTDs

AuthorsNúñez, Juan ; Avedillo, M. J. ; Quintana, J. M.
Issue Date2011
PublisherThe International Society for Optics and Photonics
CitationV VLSI Circuits and Systems (2011)
SeriesProceedings of SPIE 8067
AbstractThe incorporation of Resonant Tunnel Diodes (RTDs) into III/V transistor technologies has shown an improved circuit performance: higher circuit speed, reduced component count, and/or lowered power consumption. Currently, the incorporation of these devices into CMOS technologies (RTD-CMOS) is an area of active research. Although some works have focused the evaluation of the advantages of this incorporation, additional work in this direction is required. We compare RTD-CMOS and pure CMOS realizations of a network of logic gates which can be operated in a gate-level pipeline. Significant lower average power is obtained for RTD-CMOS implementations.
DescriptionComunicación presentada al "V VLSI Circuits and Systems" celebrado en Praga (República Checa) el 18 de Abril del 2011.
Publisher version (URL)http://dx.doi.org/10.1117/12.886816
Identifiersdoi: 10.1117/12.886816
isbn: 9780819486561
Appears in Collections:(IMSE-CNM) Libros y partes de libros
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