English   español  
Please use this identifier to cite or link to this item: http://hdl.handle.net/10261/83785
logo share SHARE   Add this article to your Mendeley library MendeleyBASE

Visualizar otros formatos: MARC | Dublin Core | RDF | ORE | MODS | METS | DIDL
Exportar a otros formatos:

CMOS SPADs selection, modeling and characterization towards image sensors implementation

AuthorsMoreno, M. ; Río, Rocío del
Issue Date2012
PublisherInstitute of Electrical and Electronics Engineers
Citation19th IEEE International Conference on Electronics, Circuits and Systems (ICECS): 332-335 (2012)
AbstractThe selection, modeling and characterization of Single Photon Avalanche Diodes (SPADs) are presented. Working with the standard 180nm UMC CMOS process, different SPAD structures are proposed in combination with several quenching circuits in order to compare their relative performances. Various configurations for the active region and the prevention of the premature edge breakdown are tested, looking for a miniaturization of the devices to implement image sensor arrays without loses in their performance.
Identifiersdoi: 10.1109/ICECS.2012.6463734
isbn: 978-1-4673-1261-5
Appears in Collections:(IMSE-CNM) Libros y partes de libros
Files in This Item:
File Description SizeFormat 
accesoRestringido.pdf15,38 kBAdobe PDFThumbnail
Show full item record
Review this work

WARNING: Items in Digital.CSIC are protected by copyright, with all rights reserved, unless otherwise indicated.