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Bifurcation diagrams in MOS-NDR frequency divider circuits

AuthorsNúñez, Juan ; Avedillo, M. J. ; Quintana, J. M.
Issue Date2012
PublisherInstituto Nacional de Astrofísica, Óptica y Electrónica
Universidad de Sevilla
CitationProceedings of the XVIII International IBERCHIP Workshop: 14-17 (2012)
AbstractThe behavior of a circuit able to implement frequency division is studied. It is composed of a block with an I-V characteristic exhibiting Negative Differential Resistance (NDR) built from MOS transistors plus an inductor and a resistor. Frequency division is obtained from the period adding sequences which appear in its bifurcation diagram. The analyzed circuit is an “all MOS” version of one previously reported which uses Resonant Tunneling Diodes (RTDs). The results show that the dividing ratio can be selected by modulating the input signal frequency, in a similar way to the RTD-based circuit.
DescriptionComunicación presentada al "Iberchip XVIII Workshop " celebrado en Playa del Carmen (México) del 29 de Febrero al 2 de Marzo del 2012.-- Presentado posteriormente al "19th IEEE International Conference on Electronics, Circuits and Systems (ICECS)" celebrado en Sevilla (España) del 9 al 12 de Diciembre del 2012.
Publisher version (URL)http://www-elec.inaoep.mx/~IWS2012/program.php
Identifiersisbn: 977-2177-128009
Appears in Collections:(IMSE-CNM) Libros y partes de libros
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