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On an Efficient CAD Implementation of the Distance Term in Pelgrom's Mismatch Model

AutorLinares-Barranco, Bernabé ; Serrano-Gotarredona, Teresa
Palabras claveAnalog design
mismatch gradient planes
mismatch modeling
Pelgrom model
sigma-space analysis
Fecha de publicación15-oct-2008
Serielinart
3
ResumenIn 1989, Pelgrom et al. published a mismatch model for MOS transistors, where the variation of parameter mismatch between two identical transistors is given by two independent terms: a size-dependent term and a distance-dependent term. Some CAD tools based on a nonphysical interpretation of Pelgrom’s distance term result in excessive computationally expensive algorithms, which become nonviable even for circuits with a reduced number of transistors. Furthermore, some researchers are reporting new variations on the original nonphysically interpreted algorithms, which may render false results. The purpose of this paper is to clarify the physical interpretation of the distance term of Pelgrom et al. and indicate how to model it efficiently in prospective CAD tools.
DescripciónBernabe Linares-Barranco and Teresa Serrano-Gotarredona, "On an Efficient CAD Implementation of the Distance Term in Pelgrom's Mismatch Model," IEEE Trans. on CAD, vol. 26, No. 8, pp. 1534-1538, August 2007. (PDF 216K, 5 pages).
URIhttp://hdl.handle.net/10261/7772
ISSN0278-0070
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