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Complex dielectric function of ion implantation amorphized SiC determined by spectroscopic ellipsometry

AutorLohner, T.; García López, J. ; Morilla, Yolanda
Palabras claveImpurities in crystals: Doping and impurity implantation: Other materials
Defects and impurities: doping, implantation, distribution, concentration, etc.
Optical constants (including refractive index, complex dielectric constant, absorption, reflection and transmission coefficients, emissivity)
Optical properties of amorphous semiconductors; glasses
Rutherford backscattering (RBS), and other methods of chemical analysis
Fecha de publicación17-mar-2008
EditorJohn Wiley & Sons
CitaciónPhysica Status Solidi C. Conferences 5(5): 1374-1377 (2008)
ResumenMeasuring with a spectroscopic ellipsometer we determined the complex dielectric function of completely amorphous silicon carbide prepared by ion implantation. 860 keV Ni+ ions were implanted into single crystalline 4H-SiC to produce thick amorphized layer. Ion beam analysis was applied to assess total amorphization. For this purpose 4He+ ion beam of 3.5 MeV was selected taking the advantage that the scattering cross section of carbon at this energy at 165° detection angle is about six times larger than the Rutherford type. Atomic force microscopy was performed to characterize the roughness of the ion-implanted surfaces. Multiple energy Ar+ implantation was used to produce homogeneous amorphous layer. The Tauc-Lorentz model was applied for the evaluation of the ellipsometric results. The implantation-induced swelling was obtained through the measurement of the step height across the masked and implanted areas. Comparison was made among the complex dielectric functions of amorphized SiC studied by us and by different research groups. It is found that the complex dielectric functions of amorphized SiC differ considerably if different ion implantation conditions were applied.
Descripción4 pages.-- PACS 61.72.up, 68.55.Ln, 78.20.Ci, 78.66.Jg, 82.80.Yc.-- Special Issue: 4th International Conference on Spectroscopic Ellipsometry (ICSE4).-- et al.
Versión del editorhttp://dx.doi.org/10.1002/pssc.200777883
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