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Título:	SiCCSi antisite pairs in SiC identified as paramagnetic defects with strongly anisotropic orbital quenching
Autor:	Gerstmann, U.; García López, J. CSIC ORCID
Fecha de publicación:	2010
Editor:	American Institute of Physics
Citación:	Physical Review B 81(19): 195208 (2010)
Resumen:	The nearest-neighbor antisite pair defects in 4H-SiC, 6H-SiC, and 3C-SiC single crystals have been identified using electron paramagnetic resonance spectroscopy in combination with a nonperturbative ab initio scheme for the electronic g tensor. Based on the theoretical predictions, the positively charged defect has been found experimentally also in the cubic 3C-SiC polytype where it is characterized by spin 1/2 and highly anisotropic g values of gxx=2.0030, gyy=2.0241, and gzz=2.0390 within C1h symmetry. The exceptional large g values are explained by details of the spin-orbit coupling causing a strongly anisotropic quenching of the orbital angular momentum of the p-like unpaired electron. © 2010 The American Physical Society.
Descripción:	8 páginas, 6 figuras, 4 tablas.-- et al.
Versión del editor:	http://dx.doi.org/10.1103/PhysRevB.81.195208
URI:	http://hdl.handle.net/10261/75189
DOI:	10.1103/PhysRevB.81.195208
Identificadores:	doi: 10.1103/PhysRevB.81.195208 issn: 1098-0121 e-issn: 1550-235X
Aparece en las colecciones:	(CNA) Artículos

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SiCCSi antisite pairs in SiC identified as paramagnetic defects with strongly anisotropic orbital quenching