DEFECT FORMATION IN LiF BY LOW ENERGY ION IMPLANTATION.

Abstract

The defect formation is studied in LiF by 100 to 290 keV **1H, **4He, **1**1B, **1**6O, and **2**0Ne ion implantation. Room temperature optical absorption is used to study the F-center aggregates as well as colloid formation. 2 K optical absorption is performed to analyze the zero phonon lines (ZPL) associated with the higher aggregates. The induced damage versus the ion mass, energy, and dose is studied. The influence of impurities such as Ni and Co, as well as pre-existing defects due to gamma irradiation is analyzed. It is observed that the induced damage decreases as the implanted ion mass increases and that negatively charged aggregates such as R prime and M prime are not formed by ion implantation. © 1985