Charge recombination imaging at the WSe2/I- interface

Abstract

Intensity modulated photocurrent measurements obtained with a focussed laser beam have been used to obtain real video images of surface recombination processes in a photoelectrochemical cell (PEC) with micrometric lateral resolution. We report here, for the first time, photoelectrochemical images of the relaxation time constant for a holes trapped at the illuminated WSe2/I- interface, which is directly related with the surface recombination rate of electrons and holes. These images convey easyly assimilable information about the influence of the semiconductor topography (crystallographic orientations, micro-defects, etc.) on its photoelectrochemical performance. © 1993.