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Charge recombination imaging at the WSe2/I- interface

AuthorsChaparro, A. M.; Salvador, P.; Tabernero, Antonio; Navarro, Rafael; Caselles, V.
Issue Date1993
CitationSurface Science 295: 457-461 (1993)
AbstractIntensity modulated photocurrent measurements obtained with a focussed laser beam have been used to obtain real video images of surface recombination processes in a photoelectrochemical cell (PEC) with micrometric lateral resolution. We report here, for the first time, photoelectrochemical images of the relaxation time constant for a holes trapped at the illuminated WSe2/I- interface, which is directly related with the surface recombination rate of electrons and holes. These images convey easyly assimilable information about the influence of the semiconductor topography (crystallographic orientations, micro-defects, etc.) on its photoelectrochemical performance. © 1993.
Identifiersdoi: 10.1016/0039-6028(93)90292-R
issn: 0039-6028
Appears in Collections:(CFMAC-IO) Artículos
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