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Kinetics of laser induced interface reactions in Sb/Ge thin multilayer films

AuthorsCatalina, Fernando ; Afonso, Carmen N. ; Serna, Rosalía ; Vega, F.
Issue Date1991
CitationSurface Science 251-252: 1006-1011 (1991)
AbstractSb/Ge multilayer films with 2, 3 and 4 alternate Sb and Ge layers are irradiated with nanosecond pulses from an excimer laser. Time-resolved optical measurements are used to monitor the kinetics of the interfacially initiated mixing process. Transmission electron microscopy is used to characterize the microstructures upon irradiation and the unique features of Sb/Ge multilayer films allow us to use TEM as a depth profile technique. Amorphous phases are formed upon irradiation and the role of the film configuration will be discussed. © 1991.
Identifiersdoi: 10.1016/0039-6028(91)91141-J
issn: 0039-6028
Appears in Collections:(CFMAC-IO) Artículos
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