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Influence of the target and working gas on the composition of silicon nitride thin films prepared by reactive RF-sputtering

AuthorsVila, M.; Prieto, C. ; García López, J. ; Respaldiza, M. A.
Issue Date2003
CitationNuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms 211(2): 199-205 (2003)
AbstractSilicon nitride thin films have been prepared at room temperature by RF reactive and non-reactive sputtering over several substrates. Pure silicon and high-density ceramic β-Si3N4 have been selected as two different target materials in order to study the properties of the obtained thin films. Additionally, different working sputtering gases have been selected to study their influence on the composition and properties of the obtained thin films. The relative composition and the absolute amount of nitrogen of the films have been determined by Rutherford backscattering spectroscopy and nuclear reaction analysis, respectively. © 2003 Elsevier B.V. All rights reserved.
Identifiersdoi: 10.1016/S0168-583X(03)01211-4
issn: 0168-583X
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