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Experimental study of a broad area vertical-cavity semiconductor optical amplifier

AuthorsMarino, Francesco; Balle, Salvador
KeywordsSemiconductor optical amplifiers (SOAs)
[PACS] Optical parametric oscillators and amplifiers
[PACS] Resonators, cavities, amplifiers, arrays, and rings
[PACS] Beam characteristics: profile, intensity, and power; spatial pattern formation
[PACS] Birefringence, polarization
Issue Date13-Jan-2004
CitationOptics Communications 231: 325-330 (2004)
AbstractAn experimental study of a broad-area vertical-cavity semiconductor optical amplifier in the 980 nm wavelength range is reported. We show that the gain and the saturation power in such a device increase as the transverse dimension of the injected beam is increased. A gain of 16.3 dB with 0.8 nm optical bandwidth and saturation power of 1.4 mW has been obtained. The polarization sensitivity of the device is also studied. We show that birefringence in the cavity affects the polarization insensitivity expected in ideal devices as a consequence of the circular symmetry of the cavity. A brief study of the wavelength dependence of the output transverse profile is also reported.
Description6 pages, 5 figures.-- PACS nrs.: 42.65.Yj; 42.60.Da; 42.60.Jf; 42.81.Gs.
Publisher version (URL)http://dx.doi.org/10.1016/j.optcom.2003.11.067
Appears in Collections:(IMEDEA) Artículos
(IFISC) Artículos
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