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dc.contributor.authorJiménez, Carmen-
dc.contributor.authorFerrer, F. J.-
dc.date.accessioned2013-04-19T12:45:33Z-
dc.date.available2013-04-19T12:45:33Z-
dc.date.issued2007-
dc.identifierdoi: 10.1016/j.surfcoat.2007.04.025-
dc.identifierissn: 0257-8972-
dc.identifier.citationSurface and Coatings Technology 201(22-23): 8971-8975 (2007)-
dc.identifier.urihttp://hdl.handle.net/10261/74744-
dc.description.abstractTiO2 thin films have been deposited at low temperature using a new atmospheric pressure deposition process, which combines remote Atmospheric Pressure (AP) Plasma with Pulsed Injection Metallorganic Chemical Vapour Deposition (PIMOCVD). The effects of post-discharge plasma and deposition parameters have been studied with respect to the deposition kinetics, morphology, and microstructure of TiO2 films. It is shown that well-crystallised TiO2 anatase films can be obtained at a temperature of only 275 °C. © 2007 Elsevier B.V. All rights reserved.-
dc.description.sponsorshipThis work has been financially support by the French project “Diademe”, funded by the MINEFI.-
dc.language.isoeng-
dc.publisherElsevier-
dc.rightsclosedAccess-
dc.titleDeposition of TiO2 thin films by atmospheric plasma post-discharge assisted injection MOCVD-
dc.typeartículo-
dc.identifier.doi10.1016/j.surfcoat.2007.04.025-
dc.date.updated2013-04-19T12:45:33Z-
dc.description.versionPeer Reviewed-
dc.type.coarhttp://purl.org/coar/resource_type/c_6501es_ES
item.openairecristypehttp://purl.org/coar/resource_type/c_18cf-
item.fulltextNo Fulltext-
item.cerifentitytypePublications-
item.openairetypeartículo-
item.languageiso639-1en-
item.grantfulltextnone-
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