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Deposition of TiO2 thin films by atmospheric plasma post-discharge assisted injection MOCVD

AuthorsJiménez, C.; Ferrer, F. J.
Issue Date2007
CitationSurface and Coatings Technology 201(22-23): 8971-8975 (2007)
AbstractTiO2 thin films have been deposited at low temperature using a new atmospheric pressure deposition process, which combines remote Atmospheric Pressure (AP) Plasma with Pulsed Injection Metallorganic Chemical Vapour Deposition (PIMOCVD). The effects of post-discharge plasma and deposition parameters have been studied with respect to the deposition kinetics, morphology, and microstructure of TiO2 films. It is shown that well-crystallised TiO2 anatase films can be obtained at a temperature of only 275 °C. © 2007 Elsevier B.V. All rights reserved.
Identifiersdoi: 10.1016/j.surfcoat.2007.04.025
issn: 0257-8972
Appears in Collections:(CNA) Artículos
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