English   español  
Please use this identifier to cite or link to this item: http://hdl.handle.net/10261/7449
logo share SHARE logo core CORE   Add this article to your Mendeley library MendeleyBASE

Visualizar otros formatos: MARC | Dublin Core | RDF | ORE | MODS | METS | DIDL | DATACITE
Exportar a otros formatos:


Cross gain modulation in broad area vertical cavity semiconductor amplifier

AuthorsMarino, Francesco; Furfaro, Luca; Balle, Salvador
KeywordsSemiconductor optical amplifiers
Optical wavelength conversion
Optical modulation
Issue Date8-Apr-2005
PublisherAmerican Institute of Physics
CitationApplied Physics Letters 86, 151116 (2005)
AbstractWe demonstrate that broad-area vertical-cavity semiconductor optical amplifiers allow for wavelength conversion at 2.5 Gb/s via cross-gain modulation sXGMd. XGM is reached with a saturation beam of only 1.5 mW over an optical bandwidth of 0.7 nm s215 GHzd. Depending on the wavelengths of the injected fields, inverted or noninverted output can be obtained.
Description3 pages.-- PACS nrs.: 42.55.Px, 42.65.Ky, 42.60.Fc.
Publisher version (URL)http://dx.doi.org/10.1063/1.1905811
Appears in Collections:(IMEDEA) Artículos
(IFISC) Artículos
Files in This Item:
File Description SizeFormat 
ApplPhysLett_86_151116.pdf56,52 kBAdobe PDFThumbnail
Show full item record
Review this work

Related articles:

WARNING: Items in Digital.CSIC are protected by copyright, with all rights reserved, unless otherwise indicated.