Por favor, use este identificador para citar o enlazar a este item: http://hdl.handle.net/10261/74451
COMPARTIR / EXPORTAR:
logo share SHARE logo core CORE BASE
Visualizar otros formatos: MARC | Dublin Core | RDF | ORE | MODS | METS | DIDL | DATACITE

Invitar a revisión por pares abierta
Título

Magnetoimpedance spectroscopy of epitaxial multiferroic thin films

AutorSchmidt, Rainer; Nemes, N. M. CSIC ORCID CVN; Munuera, C. CSIC ORCID ; García-Hernández, Mar CSIC ORCID ; Santamaría, Jacobo CSIC ORCID
Fecha de publicación2012
EditorAmerican Institute of Physics
CitaciónPhysical Review B 86(3): 035113 (2012)
ResumenThe detection of true magnetocapacitance (MC) as a manifestation of magnetoelectric coupling (MEC) in multiferroic materials is a nontrivial task, because pure magnetoresistance (MR) of an extrinsic Maxwell-Wagner-type dielectric relaxation can lead to changes in capacitance. In order to clarify such difficulties involved with dielectric spectroscopy on multiferroic materials, we have simulated the dielectric permittivity ′ of two dielectric relaxations in terms of a series of one intrinsic film-type and one extrinsic Maxwell-Wagner-type relaxation. Such a series of two relaxations was represented in the frequency- (f-) and temperature- (T-) dependent notations ′ vs f and ′ vs T by a circuit model consisting in a series of two ideal resistor-capacitor (RC) elements. Such simulations enabled rationalizing experimental f-, T-, and magnetic field- (H-) dependent dielectric spectroscopy data from multiferroic epitaxial thin films of BiMnO 3 (BMO) and BiFeO 3 (BFO) grown on Nb-doped SrTiO 3. Concomitantly, the deconvolution of intrinsic film and extrinsic Maxwell-Wagner relaxations in BMO and BFO films was achieved by fitting f-dependent dielectric data to an adequate equivalent circuit model. Analysis of the H-dependent data in the form of determining the H-dependent values of the equivalent circuit resistors and capacitors then yielded the deconvoluted MC and MR values for the separated intrinsic dielectric relaxations in BMO and BFO thin films. Substantial intrinsic MR effects up to 65% in BMO films below the magnetic transition (T C 100 K) and perceptible intrinsic MEC up to -1.5% near T C were identified unambiguously. © 2012 American Physical Society.
Descripciónet al.
Versión del editorhttp://dx.doi.org/10.1103/PhysRevB.86.035113
URIhttp://hdl.handle.net/10261/74451
DOI10.1103/PhysRevB.86.035113
Identificadoresdoi: 10.1103/PhysRevB.86.035113
issn: 1098-0121
Aparece en las colecciones: (ICMM) Artículos




Ficheros en este ítem:
Fichero Descripción Tamaño Formato
Magnetoimpedance.pdf565,77 kBUnknownVisualizar/Abrir
Mostrar el registro completo

CORE Recommender

SCOPUSTM   
Citations

80
checked on 13-abr-2024

WEB OF SCIENCETM
Citations

80
checked on 25-feb-2024

Page view(s)

356
checked on 16-abr-2024

Download(s)

340
checked on 16-abr-2024

Google ScholarTM

Check

Altmetric

Altmetric


NOTA: Los ítems de Digital.CSIC están protegidos por copyright, con todos los derechos reservados, a menos que se indique lo contrario.