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Título

Electronic structure of ultrathin bismuth films with A7 and black-phosphorus-like structures

Autor Yaginuma, Shin; Nagaoka, Katsumi; Nagao, Tadaaki; Bihlmayer, G.; Koroteev, Yuri M.; Chulkov, Eugene V. ; Nakayama, Tomonobu
Palabras clave Surface electronic structure
Ultrathin film
Structural transformation
Scanning tunneling spectroscopy
First-principles calculations
Bismuth
Fecha de publicación 25-dic-2007
EditorPhysical Society of Japan
Citación Journal of the Physical Society of Japan 77, 014701 (2008).
ResumenUsing scanning tunneling spectroscopy and first-principles calculations, we have studied the electronic structure of two different ultrathin bismuth films on a Si(111)-7×7 substrate; a hexagonal film (HEX film) having a bulklike (A7-like) structure and a film having a black-phosphorus-like structure (BP film). The HEX film is metallic because of spin–orbit (SO)-split surface-state bands lying inside the projected bulk band gap near the Fermi level. Another SO-split surface state is also observed inside the SO gap. The BP film exhibits a significant reduction in metallicity in contrast to the HEX film. This is related to the formation of a very stable paired-layer structure, the mechanism of which is similar to that of the stabilization of semiconducting bulk black P. However, unlike bulk black P, a certain extent of metallicity still remains. This slight metallicity can be associated with buckling and strain in the BP film, which is analogous to the fact that shear angle distortion in bulk Bi is responsible for its semimetallicity.
Descripción 5 pages.
Versión del editorhttp://dx.doi.org/10.1143/JPSJ.77.014701
URI http://hdl.handle.net/10261/7394
DOI10.1143/JPSJ.77.014701
ISSN0031-9015
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