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dc.contributor.authorBrooks, R. J.-
dc.contributor.authorHole, D. E.-
dc.contributor.authorTownsend, Paul D.-
dc.contributor.authorWu, Z.-
dc.contributor.authorGonzalo de los Reyes, José-
dc.contributor.authorSuárez García, A.-
dc.contributor.authorKnott, P.-
dc.date.accessioned2013-02-07T10:54:35Z-
dc.date.available2013-02-07T10:54:35Z-
dc.date.issued2002-
dc.identifierdoi: 10.1016/S0168-583X(01)01256-3-
dc.identifierissn: 0168-583X-
dc.identifier.citationNuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms 190: 709-713 (2002)-
dc.identifier.urihttp://hdl.handle.net/10261/66278-
dc.description.abstractPrecise control of ion range and ionisation rate makes ion beam induced luminescence (IBL) a useful analytical technique for studying thin films. Combinations of IBL and cathodo-luminescence (CL) offer complementary information. In the present studies of thin films of alumina produced by pulsed laser deposition (PLD), they reveal the alumina produced by pulsed laser deposition (PLD), they reveal the influence of PLD growth conditions. Strong sensitisation from the presence of a layer of copper nanoparticles, changes in nanoparticles following thermal treatments and a range of intrinsic defects in the layers were observed. For multilayer films the IBL was particularly useful in noting signals from the deeper layers. Some data were also recorded for sol–gel alumina films grown on silica or borosilicate glass. © 2012 Published by Elsevier Science B.V.-
dc.description.sponsorshipWe wish to thank EPSRC, and the Brite Euram contract BE 4427 (AMENIDAD) for financial support.-
dc.language.isoeng-
dc.publisherElsevier-
dc.rightsclosedAccess-
dc.titleIon beam induced luminescence of thin films-
dc.typeartículo-
dc.identifier.doi10.1016/S0168-583X(01)01256-3-
dc.date.updated2013-02-07T10:54:36Z-
dc.description.versionPeer Reviewed-
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