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Influence of defects on the photoluminescence of pulsed-laser deposited Er-doped amorphous Al2O3 films

AuthorsJiménez de Castro, Miguel ; Serna, Rosalía ; Chaos, J. A.; Afonso, Carmen N. ; Hodgson, E. R.
Issue Date2000
CitationNuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms 166: 793-797 (2000)
AbstractEr-doped amorphous Al2O3 films produced by alternate pulsed laser deposition show a weak Er PL emission at around 1.54 μm, the lifetime being of the order of 0.1 ms. On thermal annealing treatments up to 850 °C, the intensity increases and lifetimes as high as 6 ms are achieved. Above 800 °C slight changes in the shape of the 1.54 μm emission band are observed, suggesting changes in the local Er3+ environment. Electron irradiation of annealed films leads to a decrease in the PL intensity without changing the lifetime. This effect, which anneals out between 200 °C and 600 °C, is most likely due to electronic processes involving Er ions. This type of defect is not present in as-grown films. © 2000 Elsevier Science B.V. All rights reserved.
Identifiersdoi: 10.1016/S0168-583X(99)01178-7
issn: 0168-583X
Appears in Collections:(CFMAC-IO) Artículos
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