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Title

In situ studies of the crystallization kinetics in Sb-Ge films

AuthorsPetford-Long, A. K.; Doole, R. C.; Afonso, Carmen N. ; Solís Céspedes, Javier
Issue Date1995
PublisherAmerican Institute of Physics
CitationJournal of Applied Physics 77: 607-613 (1995)
AbstractThe crystallization process in SbxGe1-x alloy films has been observed during in situ annealing in a transmission electron microscope. Results are presented for two films with x=0.89 (89 at. % Sb) and x=0.71 (71 at. % Sb), which lie on either side of the eutectic composition (x=0.85). In the former films radial crystals are observed to grow rapidly from discrete nuclei, whereas in the latter films the crystallization process occurs through a near-planar front. In addition, quantitative data obtained from these experiments show that the Sb0.89Ge0.11 films have a higher activation energy for crystal growth and a lower temperature for the nucleation of crystals. Significant differences are observed between the crystallization processes for the two films studied, with the Sb0.89Ge0.11 film showing better potential for development as an ultrafast optical phase-change storage medium. © 1995 American Institute of Physics.
URIhttp://hdl.handle.net/10261/64575
DOI10.1063/1.359045
Identifiersdoi: 10.1063/1.359045
issn: 0021-8979
Appears in Collections:(CFMAC-IO) Artículos
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