English   español  
Please use this identifier to cite or link to this item: http://hdl.handle.net/10261/64575
logo share SHARE logo core CORE   Add this article to your Mendeley library MendeleyBASE

Visualizar otros formatos: MARC | Dublin Core | RDF | ORE | MODS | METS | DIDL
Exportar a otros formatos:


In situ studies of the crystallization kinetics in Sb-Ge films

AuthorsPetford-Long, A. K.; Doole, R. C.; Afonso, Carmen N. ; Solís Céspedes, Javier
Issue Date1995
PublisherAmerican Institute of Physics
CitationJournal of Applied Physics 77: 607-613 (1995)
AbstractThe crystallization process in SbxGe1-x alloy films has been observed during in situ annealing in a transmission electron microscope. Results are presented for two films with x=0.89 (89 at. % Sb) and x=0.71 (71 at. % Sb), which lie on either side of the eutectic composition (x=0.85). In the former films radial crystals are observed to grow rapidly from discrete nuclei, whereas in the latter films the crystallization process occurs through a near-planar front. In addition, quantitative data obtained from these experiments show that the Sb0.89Ge0.11 films have a higher activation energy for crystal growth and a lower temperature for the nucleation of crystals. Significant differences are observed between the crystallization processes for the two films studied, with the Sb0.89Ge0.11 film showing better potential for development as an ultrafast optical phase-change storage medium. © 1995 American Institute of Physics.
Identifiersdoi: 10.1063/1.359045
issn: 0021-8979
Appears in Collections:(CFMAC-IO) Artículos
Files in This Item:
File Description SizeFormat 
Petford.pdf1,39 MBAdobe PDFThumbnail
Show full item record
Review this work

Related articles:

WARNING: Items in Digital.CSIC are protected by copyright, with all rights reserved, unless otherwise indicated.