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Effect of pulsed laser irradiation on the structure of GeTe films deposited by metal organic chemical vapor deposition: A Raman spectroscopy study

AuthorsSalicio, O.; Wiemer, C.; Fanciulli, M.; Gawelda, W.; Siegel, Jan ; Afonso, Carmen N. ; Plausinaitiene, V.; Abrutis, A.
Issue Date2009
PublisherAmerican Institute of Physics
CitationJournal of Applied Physics 105: 033520 (2009)
AbstractPhase changes between amorphous and crystallized states were induced by laser irradiation with nanosecond pulses in Gex Tey films grown by metal organic chemical vapor deposition. The different phases were obtained by adjusting the pulse energy and could be distinguished by their different optical reflectivities. The corresponding structural changes were studied by Raman spectroscopy, showing marked differences for the two phases. A clear correlation is found between optical reflectivity levels, crystallographic state and the evolution of Ge-Ge, Te-Te, and Ge-Te Raman bands. © 2009 American Institute of Physics.
Identifiersdoi: 10.1063/1.3075906
issn: 0021-8979
Appears in Collections:(CFMAC-IO) Artículos
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