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Antimony trisulfide inverted opals: Growth, characterization, and photonic properties

AuthorsJuárez, Beatriz H.; Rubio, S.; Sánchez-Dehesa, J.; López, Cefe
Issue Date2002
CitationAdvanced Materials 14 (20): 1486-1490 (2002)
AbstractArtificial opals were infiltrated with antimony trisulfide. This was one of the highest dielectric function materials with an electronic gap in the visible. The material grown was characterized by standard means, revealing its crystalline structure and properties. The photonic bandgap properties of the composite and inverted structures was found to agree with calculations. This material could be the first to allow the fabrication of photonic bandgap structures with a full gap in the visible.
Identifiersissn: 0935-9648
Appears in Collections:(ICMM) Artículos
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