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| Title: | Antimony trisulfide inverted opals: Growth, characterization, and photonic properties |
| Authors: | Juárez, Beatriz H.; Rubio, S.; Sánchez-Dehesa, J.; López, Cefe  |
| Issue Date: | 2002 |
| Publisher: | Wiley-Blackwell |
| Citation: | Advanced Materials 14 (20): 1486-1490 (2002) |
| Abstract: | Artificial opals were infiltrated with antimony trisulfide. This was one of the highest dielectric function materials with an electronic gap in the visible. The material grown was characterized by standard means, revealing its crystalline structure and properties. The photonic bandgap properties of the composite and inverted structures was found to agree with calculations. This material could be the first to allow the fabrication of photonic bandgap structures with a full gap in the visible. |
| URI: | http://hdl.handle.net/10261/62650 |
| DOI: | 10.1002/1521-4095(20021016)14:20<1486::AID-ADMA1486>3.0.CO;2-P |
| Identifiers: | issn: 0935-9648 |
| Appears in Collections: | (ICMM) Artículos |
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