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dc.contributor.authorGómez-Aleixandre, C.-
dc.contributor.authorSánchez, Olga-
dc.contributor.authorAlbella, J. M.-
dc.contributor.authorSantiso, José-
dc.contributor.authorFigueras, Albert-
dc.date.accessioned2012-12-03T12:20:14Z-
dc.date.available2012-12-03T12:20:14Z-
dc.date.issued1995-
dc.identifier.citationAdvanced Materials 7 (2): 111-119 (1995)-
dc.identifier.issn0935-9648-
dc.identifier.urihttp://hdl.handle.net/10261/61753-
dc.description.abstractChemical vapor deposition at high temperatures provided the deposited atoms with the necessary surface mobility to ensure crystallinity and epitaxial growth. The use of high-temperature CVD in the deposition of high-T-c superconducting ceramics and covalent materials such as diamond (see Figure) and boron nitride is reviewed, and, for example, the methods used to maintain the tetrahedral arrangement of neighboring atoms during deposition discussed.-
dc.language.isoeng-
dc.publisherWiley-VCH-
dc.rightsclosedAccess-
dc.titleCVD of covalent compounds and high- Tc superconductors-
dc.typeArtículo-
dc.date.updated2012-12-03T12:20:14Z-
dc.description.versionPeer Reviewed-
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