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dc.contributor.authorHartmanová, M.-
dc.contributor.authorNavrátil, V.-
dc.contributor.authorBuršíková, V.-
dc.contributor.authorKundracik, F.-
dc.contributor.authorMansilla, C.-
dc.date.accessioned2012-11-30T12:13:19Z-
dc.date.available2012-11-30T12:13:19Z-
dc.date.issued2011-05-01-
dc.identifier.citationRussian Journal of Electrochemistry 47 (5): 505-516 (2011)es_ES
dc.identifier.issn1023-1935-
dc.identifier.urihttp://hdl.handle.net/10261/61632-
dc.description12 pageses_ES
dc.description.abstractElectrical conductivity, dielectric permittivity and mechanical hardness of the polycrystalline CeO2 + xSm2O3 (x = 0, 10.9–15.9 mol %) films prepared by Electron Beam Physical Vapour Deposition (EB-PVD) and Ionic Beam Assisted Deposition, (IBAD), techniques were investigated in dependence on their structure and microstructure influenced by the deposition conditions, namely composition, deposition temperature and Ar+ ion bombardment. The electrical conductivity of doped ceria prepared without Ar+ ion bombardment and investigated by the impedance spectroscopy, IS, was found to be predominantly ionic one under the oxidizing atmosphere/low-temperature conditions and the higher amounts of Sm2O3 (>10 mol %) used. The bulk conductivity as a part of total measured conductivity was a subject of interest because the grain boundary conductivity was found to be ∼3 orders of magnitude lower than the corresponding bulk conductivity. Ar+ ion bombardment acted as a reducer (Ce4+ → Ce3+) resulting in the development of electronic conductivity. Dielectric permittivity determined from the bulk parallel capacitance measured at room temperature and the frequency of 1 MHz, similarly as the mechanical hardness measured by indentation (classical Vickers and Depth Sensing Indentation-DSI) techniques were also found to be dependent on the deposition conditions. The approximative value of hardness for the investigated films deposited on the substrate was estimated using a simple phenomenological model described by the power function HV = HV 0 + aP b and compared with the so-called apparent hardness (substrate + investigated film) determined by the classical Vickers formula. Results obtained are analyzed and discussed.es_ES
dc.description.sponsorshipThe work was partially supported by the research grants no. 2/0053/10 of the Slovak Grant Agency (VEGA), no. KAN 311610701 of the Academy of Sci ences of Czech Republic (ASCR) and Project no. 2005 SK 0001, Slovak Academy of Sciences, Bratislava C.S.I.C. Sevilla, Spain (years 2006–7).es_ES
dc.language.isoenges_ES
dc.publisherMAIK Nauka/Interperiodica Publishinges_ES
dc.rightsclosedAccesses_ES
dc.subjectCeO2es_ES
dc.subjectSm2O3es_ES
dc.subjecte-beam evaporationes_ES
dc.subjectionic beam assisted depositiones_ES
dc.subjectimpedance spectroscopyes_ES
dc.subjectindentation techniquees_ES
dc.subjectelectrical conductivityes_ES
dc.subjectdielectric permittivityes_ES
dc.subjectmicrohardnesses_ES
dc.titleEffect of crystallographic structure on electrical and mechanical characteristics of Sm2O3-Doped CeO2 filmses_ES
dc.typeartículoes_ES
dc.identifier.doi10.1134/S1023193511050041-
dc.description.peerreviewedPeer reviewedes_ES
dc.relation.publisherversionhttp://dx.doi.org/10.1134/S1023193511050041es_ES
dc.identifier.e-issn1608-3342-
dc.type.coarhttp://purl.org/coar/resource_type/c_6501es_ES
item.openairetypeartículo-
item.cerifentitytypePublications-
item.languageiso639-1en-
item.grantfulltextopen-
item.openairecristypehttp://purl.org/coar/resource_type/c_18cf-
item.fulltextWith Fulltext-
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