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Influence of pulse duration on the amorphization of GeSb thin films under ultrashort laser pulses

AuthorsWiggins, S. M.; Solís Céspedes, Javier ; Afonso, Carmen N.
Issue Date2004
PublisherAmerican Institute of Physics
CitationApplied Physics Letters 84: 4445- 4447 (2004)
AbstractThe influence of pulse duration on the dynamics of laser-induced amorphization of crystalline, 25-nm-thick, GeSb films, with a range of 100 fs to 6 ns, was investigated. This dynamics of the phase change was performed using real-time reflectivity measurements with picosecond time resolution with a streak camera. The time required for the completion of the transformation was found to be of the order ∼10-15 ns. The results show an increase in the pulse duration to 1.5-20 ps range, and a decrease up to the range of 400 ps in the transformation time.
Identifiersdoi: 10.1063/1.1759062
issn: 0003-6951
Appears in Collections:(CFMAC-IO) Artículos
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