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Hole burning spectroscopy of R′ aggregate color centers in polycrystalline LiF thin films using a GaAlAs diode laser

AuthorsOrtiz, Carmen; Afonso, Carmen N. ; Pokrowsky, P.; Bjorklund, G. C.
Issue Date1983
PublisherAmerican Institute of Physics
CitationApplied Physics Letters 43: 1102- 1104 (1983)
AbstractThe first spectroscopic measurements of R′ aggregate color centers contained in polycrystalline LiF hosts are reported. The inhomogeneous and homogeneous widths of the 830-nm zero phonon line are measured by conventional grating spectroscopy and by photochemical hole burning spectroscopy using a current tuned GaAlAs diode laser with 3-mW output power. An extensive photochemical hole burning comparison between single and polycrystalline samples is presented.
Identifiersdoi: 10.1063/1.94241
issn: 0003-6951
Appears in Collections:(CFMAC-IO) Artículos
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