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dc.contributor.authorMorilla, M. C.es_ES
dc.contributor.authorAfonso, Carmen N.es_ES
dc.contributor.authorPetford-Long, Amanda K.es_ES
dc.contributor.authorDoole, R. C.es_ES
dc.date.accessioned2012-10-30T12:49:07Z-
dc.date.available2012-10-30T12:49:07Z-
dc.date.issued1996-
dc.identifierdoi: 10.1016/0040-6090(95)07024-9-
dc.identifierissn: 0040-6090-
dc.identifier.citationThin Solid Films 275: 78- 81 (1996)es_ES
dc.identifier.urihttp://hdl.handle.net/10261/59231-
dc.description.abstractRelaxed amorphous areas induced in SbxGe1-x. films by laser irradiation have been crystallised by isothermal annealing during in-situ observation in a transmission electron microscope. The results show that the nucleation process and the temperatures required to trigger the crystallisation are different for films with compositions on either side of the eutectic (x = 0.85). The results suggest that relaxation only leads to a substantial decrease of the free energy in amorphous films with a Sb content higher than that of the eutectic.-
dc.description.sponsorshipThis work has been partially supported by CICYT under the TIC93-0125 project.-
dc.language.isoenges_ES
dc.publisherElsevieres_ES
dc.rightsclosedAccess-
dc.titleThe influence of composition on the crystallisation kinetics of relaxed SbGe filmses_ES
dc.typeartículoes_ES
dc.identifier.doi10.1016/0040-6090(95)07024-9-
dc.date.updated2012-10-30T12:49:07Z-
dc.description.versionPeer Reviewed-
dc.relation.csices_ES
dc.type.coarhttp://purl.org/coar/resource_type/c_6501es_ES
item.openairetypeartículo-
item.grantfulltextnone-
item.cerifentitytypePublications-
item.openairecristypehttp://purl.org/coar/resource_type/c_18cf-
item.fulltextNo Fulltext-
item.languageiso639-1en-
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