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dc.contributor.authorNúñez Sánchez, Sara-
dc.contributor.authorRoque, Pablo M.-
dc.contributor.authorSerna, Rosalía-
dc.contributor.authorPetford-Long, A. K.-
dc.date.accessioned2012-10-26T10:53:24Z-
dc.date.available2012-10-26T10:53:24Z-
dc.date.issued2011-
dc.identifierdoi: 10.1063/1.3579523-
dc.identifierissn: 0003-6951-
dc.identifier.citationApplied Physics Letters 98: 151109 (2011)-
dc.identifier.urihttp://hdl.handle.net/10261/58984-
dc.description.abstractThe efficient excitation of Er3+ ions through contact with Si nanoparticles (NPs) is demonstrated. A nanostructured doping process has been developed that leads to contact between Si NPs formed in situ and optically-active Er3+ ions embedded in Al2 O3. This is achieved by independent and consecutive deposition of the dopants and matrix. The Si NP- Er3+ contact regime enhances the probability of efficient interaction due to the local spatial overlap of the electronic states of the Er3+ and of the Si NP exciton, enabling energy transfer by interband exciton recombination. This leads to up to 53% of the Er3+ ions being excited in as-deposited films. © 2011 American Institute of Physics.-
dc.language.isoeng-
dc.publisherAmerican Institute of Physics-
dc.rightsopenAccess-
dc.titleSi nanoparticle- Er3+ coupling through contact in as-deposited nanostructured films-
dc.typeartículo-
dc.identifier.doi10.1063/1.3579523-
dc.date.updated2012-10-26T10:53:24Z-
dc.description.versionPeer Reviewed-
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